A semiempirical method of applying the dechanneling correction in the extraction of disorder distribution

The application of single, plural or multiple scattering theories to the determination of defect dechanneling in channeling-backscattering disorder measurements is re-examined. A semiempirical modification to the method is described that results in making the extracted disorder and disorder distribution relatively insensitive to the scattering model employed. The various models and modifications have been applied to the 1–2 MeV He+ channeling-backscatter data obtained from 20–80 keV H+ to Ne+ bombarded Si, GaP and GaAs at 50 K. and 300 K.