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II-VI heterostructures composed of ZnSe/ZnTeSe layers have been employed to develop high-brightness green light-emitting diodes operating at peak wavelengths in the pure green spectral region (508–514 nm). The brightest devices produce 792 µW (10 mA, 4 V) peaked at 510 nm. This corresponds to an external efficiency of 2% and a luminous performance of 8.0 lumen/W.
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Eason et al. (1994) studied this question.
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