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Fine patterns are fabricated by using optical projection lithography with both an oil immersion lens of NA=1.25 and a conventional single-layer resist. Chlorobenzene soak is used in order to remove the immersion oil and to improve the side wall profile of the resist patterns. Some samples are lightly etched by O 2 plasmas in order to remove a residual resist at the bottom of the resist patterns. Finally, it is found that a 0.18 µm fine resist pattern with a good edge definition can be fabricated. Al line and space pattern with a width of about 0.21 µm is also fabricated by lift-off technique.
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Kawata et al. (1992) studied this question.
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