Schottky barrier reduction on optoelectronic responses in heavy ion irradiated WSe ₂ memtransistors

This is the authors' abstract. We don't add key points for this paper.

channel besides the amorphous structure; these complex defects could seriously affect the transport properties of the devices. We believe that this work serves as a foundation for aerospace radiation applications of all-in-one devices. It also opens a new application field of heavy ion irradiation technology for the development of multiterminal memtransistor-based optoelectronic artificial synapses for neuromorphic computing.