Direct writing onto Si by electron beam stimulated etching

Direct writing onto Si has been demonstrated by electron beam induced surface reaction using a XeF2 source. The electron beam stimulated etched depth for Si(100) is proportional to the electron dose. Etch depth by electron beam stimulated etching is 500 nm at 10 kV accelerating voltage, 4×10−3 C/cm2 dose, and 5 mTorr XeF2 gas pressure. An enormously high etching yield of about 100 Si atoms per electron has been observed for electron stimulated etching using the XeF2 source. A 0.5-μm linewidth pattern has been fabricated at a 4×10−3 C/cm2 dose.