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Abstract Thin film solar cells are economical and simple to produce. This study seeks to comprehensively analyze ways to improve the efficiency and minimise the cost per watt of CIGS/SWCNT bulk heterojunction solar cells. The device performance is enhanced by lowering the defect density of single-walled carbon nanotubes (SWCNTs) and minimizing back surface recombination velocity through the back surface field mechanism. To maintain the realistic condition throughout the simulation authors, consider the series (R s ) and shunt (R sh ) resistances of 0.5 and 10 3 ohm cm 2 respectively. The optoelectronic output parameters V OC , J SC , FF, and efficiency ( η ) of the cells are extensively studied using the SCAPS-1D simulation tool with respect to variations in thickness, acceptor density, radiative recombination coefficient, parasitic resistance, work function, temperature, and defect density. The novel solar cell device structure Ni/SWCNT/CIGS/WS 2 /ZnO/Al exhibits a photoconversion efficiency of 27.73% followed by V OC of 0.80 V, FF of 80.38%, and J SC of 42.59 mA cm −2 at CIGS thickness of 400 nm. Mott Schottky Plot analysis was carried out at a frequency of 1 MHz to find the built-in potential (0.67 V) of the proposed solar cell. This simulation study could help manufacturing companies enhance the profitability of CIGS solar cell production.
Kumar et al. (Wed,) studied this question.