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In article number 1700243, a concomitant resistive switching mode with opposite voltage polarity, in comparison to the standard switching in tantalum-oxide-based ReRAM devices, is identified by Alexander Schönhals, Dirk J. Wouters, and co-workers. A physical model based on oxygen exchange between the metal oxide and the active (Pt) electrode is proposed, schematically depicted in the inside cover picture.
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Schönhals et al. (2018) studied this question.
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