Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE

A modification of the cold-wall organometallic vapor-phase epitaxial (OMVPE) process for the growth of AlxGa1−xAs layers is described. Graphite baffles placed in the gas stream act to greatly increase the photoluminescence efficiency of the AlxGa1−xAs. Preliminary evidence indicates that the effect of the baffles may be to provide a solid surface upon which Al2O3 can be deposited from the reaction of trimethylaluminum with any residual O2 and/or H2O in the vapor phase. The ’’gettering’’ action apparently reduces oxygen contamination of the AlxGa1−xAs.