The etch rate of PMMA film in O 2 plasma is found to be reduced by synchrotron radiation (SR) exposure. This phenomenon is accompanied by a reduction in film thickness. IR and XPS analyses reveal that this thickness reduction is caused by scission and removal of the ester side chain. Etch rate of the SR-exposed film decreases to about 1/3 of the unexposed film. This characteristic makes dry-development possible.
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Saito et al. (1987) studied this question.