Characteristic investigation of a flexible resistive memory based on a tunneling junction of Pd/BTO/LSMO on mica substrate

Recently, resistive memory devices based on flexible plastic substrates have attracted increasing attention due to their potential deployment in wearable or implantable circuits and systems. Most resistive memories on plastic substrates cannot grow well or function properly at high temperatures. In this study, in order to mitigate the challenges of high temperature and flexibility, mica is selected as the substrate for resistive memories. Specifically, resistive memories with a tunneling junction structure of Pd/BTO/LSMO are fabricated on a 10 μm-thick mica substrate. This innovation not only achieves a bending radius of 15 mm, but also exhibits excellent electrical characteristics even after bending 104 times. In addition to stable switching characteristics and multi-value storage demonstration at room temperature, excellent retention characteristics and robust state conversions between HRS and LRS are observed at high temperatures up to 200 °C. These measurement results indicate that the excellent flexibility and thermal stability of mica-based transparent resistive memories make the proposed device very promising in wearable or implantable electronic systems.