Impurity diffusion, using the donor impurity Sb, has been used to prepare high-quality Pb1−xSnxTe (x=0.13–0.20) light-emitting diodes. The emission of 8–14 μ spontaneous and laserlike radiation from these diodes is discussed in terms of the optical gain expected at these wavelengths.
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Antcliffe et al. (1970) studied this question.
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