Electrical measurements and photoluminescence experiments were performed on several CdTe and Cd0.96Zn0.04Te crystals with dislocation density in the range 5 x 104 - 6 × 105 cm-2. The observed variation in electron mobility has been interpreted in terms of scattering on space charge regions surrounding dislocations, a related reduction in the effective volume of the crystals, and excess scattering due to a non ideal alloy behaviour. The linewidth of the acceptor-bound exciton recombination line includes contributions due to alloy disorder and dislocations, the latter being enhanced in the alloys.
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Guergouri et al. (1990) studied this question.
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