Alternative technologies for the manufacturing of silicon solar cells with a PERL structure are under investigation, in the frame work of IMEC’s PV roadmap. The use of a Ti/Cu-based front metallization provides a higher degree of freedom in the design of the emitter. In our cells, this is exploited by the integration of highly resistive emitters formed by POCl3 diffusion or implantation. Solar cells efficiencies up to 18.7% are reached with such emitters and a passivated rear, locally contacted by Al-BSF. Further work on metallization has lead to efficiency up to 19.4% by reducing shadowing down to 4%. In parallel, implantation and epitaxial growth of boron doped silicon are investigated for the formation of a local BSF. In a first instance, the tests have been performed with full B-BSF. A comparison with a full Al-BSF and local Al-BSF is presented here.
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Allebé et al. (2010) studied this question.