Using a novel single-top molecular beam epitaxy growth technology on nonplanar substrates, an InGaAs/AlGaAs laser amplifier has been integrated with a 4-mm-long passive waveguide cavity and a QW modulator. Lasing action of the entire structure was achieved by a current of 60 mA flowing through the amplifier section. Mode-locking experiments in which an RF signal was applied to the modulator segment led to nearly-transform-limited pulses with a duration of 4.4 ps and a time-bandwidth product of 0.43.>
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Brovelli et al. (1993) studied this question.
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