An efficient self-powered photodetector design involving a C-Si hetero-interface with back-to-back MOS-Schottky (Pt-SiO2-Si-C-Pt) device action is presented. Pulsed laser deposition of a carbon thin film is used which dynamically removes the native surface oxide to form the desired Schottky interface. The combined device action yields two orders of magnitude photoresponse at zero bias.
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Shaikh et al. (2014) studied this question.
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