Waveguides based on line defects in pillar photonic crystals have been fabricated in InP∕InGaAsP∕InP technology. Transmission measurements of different line defects are reported. The results can be explained by comparison with two-dimensional band diagram simulations. The losses increase substantially at mode crossings and in the slow light regime. The agreement with the band diagrams implies a good control on the dimensions of the fabricated features, which is an important step in the actual application of these devices in photonic integrated circuits.
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Kok et al. (2007) studied this question.
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