Studies leading to repeatable large-area growth of monolayer MoS2 in APCVD

Atmospheric Pressure Chemical Vapor Deposition (APCVD) is a very promising technique for growing good quality monolayer MoS 2 . Despite a lot of research, repeatability and reliability of the monolayer MoS 2 growth on the SiO 2 /Si substrate are issues. In the present work, we have studied the growth process systematically and have introduced some improvisation in the traditional APCVD method for producing repeatable growth of large-area, good coverage monolayer MoS 2 domains. This has been achieved by overcoming the problem of residual oxygen, performing calculations for precursors transport in the CVD chamber for the estimation of initial synthesis parameters. The effect of synthesis parameters around the initial values of the growth of monolayer MoS 2 was then systematically studied. Moreover, this method does not need any use of a promoter, a catalyst or dynamic movement of setup during growth. The monolayer MoS 2 was consistently grown across the entire substrate, which was confirmed through Raman, Photoluminescence spectroscopy (PL), Atomic Force Microscopy (AFM), fluorescence optical imaging, and Transmission electron microscopy (TEM). Based on the results, the method can be adapted to any CVD reactors to obtain reproducible results suitable for scalable production of monolayer MoS 2 .