SrRuO 3 /(Ba, Sr)TiO 3 /SrRuO 3 capacitor annealed in the forming gas with and without oxygen addition

Forming gas (3%H2+97%N2) anneals result in decomposition of SrRuO3 and increase the leakage current of the SrRuO3/(Ba, Sr)TiO3/SrRuO3 capacitor. However, we show that 0.5% O2 addition to the forming gas (3%H2+0.5%O2+96.5%N2) does not cause degradation of the SrRuO3/(Ba, Sr)TiO3/SrRuO3 capacitor, and can also enhance the performance of the transistor effectively. To correctly study the effect of a forming gas anneal on the SrRuO3/(Ba, Sr)TiO3/SrRuO3 capacitor, efforts should be made to avoid the possible O2 diffusion from air into furnace.