c -axis textured La0.7Sr0.3MnO3−δ (LSMO) films were fabricated on SiO2/Si(001) substrates using a Bi4Ti3O12 (BTO) template layer. Electrical and magnetic properties of LSMO were investigated. The LSMO/BTO layer of this structure has no in-plane alignment. Even though a ferromagnetic transition temperature, TC, is as high as that of the epitaxial LSMO film (360 K), a resistivity peak temperature, TP, is about 140 K lower than TC. The resistivity behavior as a function of temperature for LSMO/BTO/SiO2/Si films is found to be dominated by grain boundary effects. Low field sensitive magnetoresistance which suggests spin tunneling through the grain boundaries is also observed at room temperature.
No takes yet. Share an insight, caveat, or question.
Gu et al. (1997) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: