Currently, some duplexers are required to have a good temperature coefficient of frequency (TCF). An Al electrodes/36–48° Y X -LiTaO 3 substrate, which is used for most surface acoustic wave (SAW) duplexers, does not have a good TCF. Its TCF can be improved by depositing a SiO 2 film with a positive TCF on a transversal SAW filter consisting of a substrate with a negative TCF such as LiTaO 3 and LiNbO 3 . However, resonator-type SAW devices combining a SiO 2 film, Al electrodes, and a LiTaO 3 substrate do not show good frequency characteristics because of their small reflection coefficient and so on. It is considered as a countermeasure that a resonator using the reflection of a shear horizontal (SH) wave at substrate edges will show good frequency characteristics because its reflection coefficient is very large regardless of the Al electrode and SiO 2 films thicknesses. It has been difficult to obtain a high-frequency edge reflection resonator using ordinary machining techniques because it requires extremely fine substrate edges. However, a high-frequency edge reflection resonator with a good TCF and excellent frequency characteristics has been realized using our newly developed method of obtaining fine edges.
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Kadota et al. (2007) studied this question.
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