Polysilicon transistors on glass by pulsed-laser annealing

Amorphous silicon thin films deposited on glass substrates were crystallized by pulsed-laser annealing. A grain size up to 2000 Å was observed. Transistors were made, and electrical measurements showed that the field-effect mobility was in the range 15–20 cm2/V s, instead of 10−2−10−3 cm2/V s in the unannealed regions.