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April 1, 2009Laser Physics

Investigation of hot electrons and hot phonons generated within an AlN/GaN high electron mobility transistor

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Authors

GXGuowen XuUniversity of Electronic Science and Technology of ChinaSTSuvranta K. TripathyCalifornia University of PennsylvaniaXMX. MuNingbo University

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Xu et al. (2009) studied this question.

synapsesocial.com/papers/6a72f4ae5c14dd067a154d97https://doi.org/10.1134/s1054660x09040306
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