Electronic subbands of aδdoping layer in GaAs in a parallel magnetic field

The B? magnetoconductivity in the V-shaped potential well of {δ}-doped GaAs(Si) shows oscillatory behavior along the B? axis at constant Nₛ. At finite field B? the subband levels are raised by a diamagnetic energy shift and may be pushed over the Fermi level. Due to the formation of magnetoelectric subbands the E(k) dispersions are distorted. According to a self-consistent model calculation the features of {σ}(B?) are explained in terms of the oscillating density of states at the Fermi level.