Band offsets between amorphous LaAlO3 and In0.53Ga0.47As

The band offsets between an amorphous LaAlO3 dielectric prepared by molecular-beam deposition and a n-type In0.53Ga0.47As (001) layer have been measured using synchrotron radiation photoemission spectroscopy. The valence and conduction band offsets at the postdeposition annealed LaAlO3∕InGaAs interface are 3.1±0.1 and 2.35±0.2eV, respectively. The band gap of LaAlO3, as determined by Al 2p and O 1s core level energy loss spectra, is 6.2±0.1eV. Within the resolution of the medium energy ion scattering technique, no interfacial oxide layer is seen between the InGaAs and the 3.6nm thick amorphous LaAlO3.