X-ray Si K -emission bands of amorphous SiO x : H alloy films (0 ⩽ x ⩽ 1.7) are presented. The samples were prepared by rf glow discharge decomposition of SiH 4 -CO 2 -H 2 gas mixtures in a capacitive reactor system. For x < 0.5 the Si K -emission bands are very similar in shape and peak position to that of a-Si: H, for 0.5 < x < 1.7, however, a dramatic reshaping of the Si K -emission bands occurs. For x = 1.7 the spectra resemble that of crystalline SiO 2 (β-crystobalite). The resulting Si K -emission bands are compared with UPS/XPS spectra of a-SiO x in which, contrary to XES spectra, no impressive changes of spectral features are observed. Our measurements demonstrate that the Si K -emission bands of the system a-SiO x : H are more sensitive to sample composition than UPS/XPS spectra. The results delineate the nontrivial behaviour of Si p -like electrons evolving from covalent Si-Si to rather ionic Si-O bonds.
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Wiech et al. (1990) studied this question.
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