Formation of n-Layer in In0.53Ga0.47As by Si Implantation

Electrical activtaion behavior of Si atoms implanted into LPE-grown In 0.53 Ga 0.47 As layer is discussed. Activation of Si atoms occurs during 500–700°C heat treatment, corresponding to the annealing out of the lattice disorders as observed by the channeling analysis. Annealing at 700°C of 1×10 14 Si ions cm -2 implanted InGaAs resulted in the formation of an n-layer having a maximum electron mobility of 7000 cm 2 /V·s at the corresponding free electron concentration of 8×10 17 cm -3 , which is comparable to the data obtained for the epitaxially grown layers.