Al N ∕ Al Ga N ∕ Ga N metal-insulator-semiconductor high-electron-mobility transistor on 4in. silicon substrate for high breakdown characteristics

Al N ∕ Al Ga N ∕ Ga N metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) grown on 4in. silicon substrate have been demonstrated. The heterostructure exhibited high sheet carrier density with small surface roughness. AlN∕AlGaN∕GaN MIS-HEMT exhibited maximum drain current density (IDSmax) of 361mA∕mm and maximum extrinsic transconductance (gmmax) of 152mS∕mm. Due to the increase of sheet carrier density, the 2DEG channel shifts towards the AlGaN/GaN interface resulting in positive shift of the threshold voltage (−2.6to−1.8V). Two orders of magnitude low gate leakage current and reduced drain current collapse with high breakdown voltage of 230V have been observed on AlN∕AlGaN∕GaN MIS-HEMTs.