A novel gallium arsenide high-voltage MESFET structure (HVFET) suitable for high-voltage, high-speed output drivers is described. The device uses an extended drain region and a two-step gate field plate structure to achieve high breakdown voltage of 130 V. The device is implemented using a standard GaAs enhancement/depletion MESFET digital IC process without any additional processing steps and exhibits turn-on and turn-off times under 200 ps.>
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Mok et al. (1994) studied this question.
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