Temperature dependence of critical stress in oxygen-free silicon

The temperature dependence of the critical resolved shear stress in oxygen-free silicon was determined in the temperature range 800–1050 °C, using the method of indentation dislocation rosettes. We found the stress to vary only about 30% in the temperature range studied, that is, from about 4.3×107 to about 3.2×107 dyn/cm2. The implications on the phenomenon of thermal slip in silicon-wafer processing are discussed.