The pressure dependence of the refractive index (dn/dP) of several amorphous chalcogenide semiconductors is reported. dn/dP is positive for materials containing group-VI elements in twofold coordination (lone-pair semiconductors), whereas it is negative for tetrahedral semiconductors. Furthermore, dn/dP is the same for the amorphous and crystalline phases of a given semiconductor. Although a one-oscillator (Penn) model adequately predicts dn/dP for tetrahedral semiconductors, a similar approach does not predict the positive dn/dP of lone-pair semiconductors. Local-field corrections appear to be the cause of the positive dn/dP. The Lorenz-Lorentz description of the local field predicts dn/dP in agreement with experiment for most molecular lone-pair materials. It fails, however, for materials containing large concentrations of group-IV elements. The limitations of the local-field correction in describing dn/dP of partially molecular semiconductors is discussed.
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M. A. Kastner (1972) studied this question.
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