The passivation of the InP surface by sulfur treatment is studied in the temperature range between 150–300 °C by angle resolved X-ray photoelectron spectroscopy and photoluminescence measurements. The thermal sulfurization results in a 30 Å (1 Å = 10 −10 m) overlayer of In 2 S 3 and P 2 O 5 . This cap layer lowers the phosphorus escape rate from the substrate thereby reducing the defects associated with phosphorus vacancies.
No takes yet. Share an insight, caveat, or question.
Sundararaman et al. (1991) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: