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Electrical properties of GaSb epitaxial layers grown by the MOCVD method under various conditions are studied. It is shown that the morphology of the layers, free-carrier concentration, and carrier mobility depend on the molar flux ratio TMSb/TEGa. The structure and luminescent properties of the layers are analyzed at 77 K. The dependences of the growth rate, carrier concentration, and carrier mobility on the III–V ratio in the gas phase are obtained. An abrupt decrease in carrier mobility at TMSb/TEGa ≈ 3 is observed.
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Levin et al. (2006) studied this question.
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