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October 1, 2002IEEE Electron Device Letters

1300-V 6H-SiC lateral MOSFETs with two RESURF zones

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Authors

SBSneha BanerjeeSandia National LaboratoriesTCT. Paul ChowRensselaer Polytechnic InstituteRGR.J. GutmannLockheed Martin (United States)

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Banerjee et al. (2002) studied this question.

synapsesocial.com/papers/6a73136f542cb04b60cd5c05https://doi.org/10.1109/led.2002.803768
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