Temperature dependence of gate and substrate currents in the CHE crossover regime

This paper presents new experimental data on the bias and temperature dependence of gate (I/sub G/) and substrate (I/sub B/) currents in submicrometer n-MOSFET's at drain voltages much smaller than the Si-SiO/sub 2/ energy barrier (V/sub DS//spl Lt//spl Phi//sub B//q/spl sime/3.15 V). In particular, we report simultaneous measurements of I/sub G/ and I/sub B/ in that part of the bias range conventionally defined "channel hot electron" regime (CHE) where I/sub B/ decreases for decreasing temperature (substrate current crossover regime). It is found that, at low V/sub DS/, the two currents exhibit an opposite temperature dependence, unexplained by present models.>