The transition metal dichalcogenide MoTe2 is fabricated into few-layer field-effect transistors that show hole conduction with a mobility of 2.04 V cm−2 s−1. Four-layer MoTe2 devices have a high photoresponsivity of 6 A W−1 and a response time, at around 160 μs, over 100 times faster than previously reported, making them a strong candidate for high speed and high sensitivity photodetection.
No takes yet. Share an insight, caveat, or question.
Octon et al. (2016) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: