An Approach to Extract the Trap States via the Dynamic Ron Method With Substrate Voltage Applied During the Recovery Time

This study discusses the application of the substrate voltage during the recovery time with the dynamic on-resistance (dynamicRₒₙ) method to extract the deep trap states in the buffer layer after the hard-switching stress in p-GaN high electron mobility transistors (p-GaN HEMTs). This method will be more suitable for the detection of the deep trap states where the carriers are difficult to de-trap in the buffer layer. Then, a hard switching stress condition is applied to the device and the degradation is caused by the mechanism of the hot electron effect and the impact ionization. The generated electrons and holes will trap into the buffer layer in the drift region at the gate edge near the drain side and the AlGaN layer under the gate, respectively. Moreover, through the novel of the dynamicRₒₙmethod with the substrate voltage applied, the deep trap states in the buffer can be extracted.