Angle‐resolved photoemission spectroscopy (ARPES) and X‐ray photoemission spectroscopy have been used to characterise epitaxially ordered graphene grown on copper foil by low‐pressure chemical vapour deposition. A short vacuum anneal to 200 °C allows observation of ordered low energy electron diffraction patterns. High quality Dirac cones are measured in ARPES with the Dirac point at the Fermi level (undoped graphene). Annealing above 300 °C produces n‐type doping in the graphene with up to 350 meV shift in Fermi level, and opens a band gap of around 100 meV. magnified image Dirac cone dispersion for graphene on Cu foil after vacuum anneals (left: 200 °C, undoped; right: 500 °C, n‐doped). Centre: low energy electron diffraction from graphene on Cu foil after 200 °C anneal. Data from Antares (SOLEIL). (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
No takes yet. Share an insight, caveat, or question.
Marsden et al. (2013) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: