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The interlayer coupling of CoFeB-based synthetic antiferromagnets (SyAFs), modulated by the ion-beam assisted deposition (IBAD) has been systematically investigated under different assisted deposition voltage from 0 to 140 V. We observe that proper IBAD voltage can significantly enhance the antiferromagnetically coupled saturation field from 280 to 1000 Oe and retain the amorphous structure of CoFeB layers. This approach provides a convenient method to enhance the magnetic coupling of SyAFs, which is useful for the magnetic tunnel junctions fabrication and magnetoresistive random access memory development.
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Huang et al. (2007) studied this question.
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