The compliance-current dependence of the resistive-switching behaviors is investigated inTaN/CuₓO/Cumemory devices with 1R architecture and 1T1R architecture, respectively. The correlation of reset currentIᵣₑₛₑₜandon-state resistanceRₒₙcan be verified by adjusting the compliance currentIcomp. Meanwhile,IᵣₑₛₑₜandRₒₙbecome independent onIcompin the 1R architecture whenIcompis below 1 mA. A serious compliance-current overshoot phenomenon isin situobserved in 1R-architecture device, and it remarkably affects the resistive-switching characteristics because the compliance current dominates the memory behaviors. Therefore, resistive-switching investigation based on 1T1R architecture is much more reliable.
No takes yet. Share an insight, caveat, or question.
Wan et al. (2010) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: