We present a study of Fano-type resonances in high quality boron-doped silicon as a function of boron content. The resonance (antiresonance) in the infrared absorption spectra occurs close to the ≈ 0 optical phonon at 519 cm −1 . The interaction between the otherwise infrared-forbidden optical phonon and the continuum states of the acceptor was analysed based on a modified Fano model that involves the interaction of a discrete state with two continua.
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Gaji et al. (2003) studied this question.
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