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The steady-state velocity-field characteristics for n-type InP are obtained via a Monte Carlo calculation for temperatures between 77 and 400 K, as well as for impurity compensation ratios between 0.0 and 0.9. Electron drift mobilities, peak velocities, and peak electric fields are extracted by a curve fitting procedure. A comparison with reported GaAs values suggests that InP has some superior transport characteristics and is well suited for high-frequency/gain electronic device applications. This improvement was seen to be due mainly to high L-Γ and X-Γ energy valley separations in InP. An empirical relationship between drift velocity and applied electric field, with the low-field drift mobility as an input parameter is presented for use in computer modeling of InP devices.
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Costa et al. (1989) studied this question.
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