Electrical properties and spectral response of PbS–Ge heterojunctions

PbS–Ge heterojunctions have been prepared by chemical deposition. I–U and photovoltaic characteristics of the p–p and p–n+ diodes have been obtained in the 78 to 300 °K temperature range. The energy band diagram is given both for the p–p and p–n+ junctions in agreement with the experimental results; the electron affinity difference between PbS and Ge is found to be 0.4 eV at liquid nitrogen temperature.