Electrical degradation of (Ba, Sr)TiO3 (BST) thin films was investigated by annealing Pt/BST/Pt structures in D2/N2 and D2O-containing furnace ambients. Deuterium depth profiles were correlated to the current–voltage characteristics of the BST thin films. The dependence of the D distribution and leakage current density on the D incorporation method indicates that mobile, donor-type deuterium defects dissolve in large concentrations within BST thin films, and that their effects on leakage properties depend on the nature of their charge compensation. A mechanism is proposed for the leakage current increase after D2/N2 anneals, and good quantitative agreement between the theoretical results and experimental data is demonstrated.
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Ahn et al. (2000) studied this question.
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