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Constructing heterostructures can endow materials with fascinating performance in high‐speed electronics, optoelectronics, and other applications owing to the built‐in charge‐transfer driving force, which is of benefit to the specific charge‐transfer kinetics. Rational design and controllable synthesis of nano‐heterostructure anode materials with high‐rate performance, however, still remains a great challenge. Herein, ultrafine SnS/SnO 2 heterostructures were successfully fabricated and showed enhanced charge‐transfer capability. The mobility enhancement is attributed to the interface effect of heterostructures, which induces an electric field within the nanocrystals, giving them much lower ion‐diffusion resistance and facilitating interfacial electron transport.
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Zheng et al. (2016) studied this question.
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