Monolithic Integration of Single Quantum Emitters in hBN Bullseye Cavities

The ability of hexagonal boron nitride to host quantum emitters in the form of deep-level color centers makes it an important material for quantum photonic applications. This work utilizes a monolithic circular Bragg grating device to enhance the collection of single photons with a 436 nm wavelength emitted from quantum emitters in hexagonal boron nitride. We observe a 6-fold increase in collected intensity for a single-photon emitter coupled to a device compared to an uncoupled emitter and show exceptional spectral stability at cryogenic temperature. The devices were fabricated by using a number of etching methods, beyond standard fluorine-based reactive ion etching, and the quantum emitters were created by using a site-specific electron beam irradiation technique. Our work demonstrates the potential of monolithically integrated systems for deterministically placed quantum emitters using a variety of fabrication options.