We report on a high-transparency low-resistance composite contact structure on p-GaN for light-emitting diode applications. The structure consists of a thin Ni(5nm)∕Au(5nm) layer overcoated with a sputtered Al-doped ZnO (170nm) layer. Enhancement in light emission intensity as high as 74% at 40mA and forward operating voltages in the range of 3.36–3.48V at 20mA are obtained for these devices using a two-step thermal annealing process.
No takes yet. Share an insight, caveat, or question.
Jung et al. (2005) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: