The first-order phase transition at the Si (001) surface from single to double atomic steps as a function of temperature T and off-orientation θ of the Si (001) surface along [11̄0] is observed in a metalorganic chemical vapor deposition environment at surprisingly low temperatures. At a given temperature the surface morphology of Si is frozen in by growing InP on top of Si. The existence or the lack of antiphase domains in the InP provides the information about the presence of single or double atomic steps on the Si, respectively, in the moment of growth. Reversability and slight hysteresis of the phase transition are found. The growth parameters for obtaining antiphase domain-free InP are optimized. Residual stress, epilayer tilt, and defect distribution are discussed. The different peaks in photoluminescence spectra are identified; the assignments are confirmed by using time-delayed cathodoluminescence (CL) spectra. The lateral variation of quantum efficiency is imaged with scanning CL.
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Grundmann et al. (1991) studied this question.