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January 1, 2000IEEE Transactions on Electron Devices

AlGaN/GaN heterostructure field-effect transistor model including thermal effects

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Authors

JAJohn D. AlbrechtClinical Research SolutionsPRP. P. RudenUniversity of MinnesotaSBS.C. BinariUnited States Naval Research Laboratory

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Albrecht et al. (2000) studied this question.

synapsesocial.com/papers/6a7470e26a5eb4b8f5090ca3https://doi.org/10.1109/16.877163
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