An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au–AlN SBD features a low ideality factornof 3.3 and an effective Schottky barrier height (SBH) of 1.05 eV at room temperature. The ideality factorndecreases and the effective SBH increases at high temperatures. The temperature dependences ofnand SBH were explained using an inhomogeneous model. A mean SBH of 2.105 eV was obtained for the Ni–AlN Schottky junction from the inhomogeneity analysis of the current–voltage characteristics. An equation in which the parameters have explicit physical meanings in thermionic emission theory is proposed to describe the current–voltage characteristics of inhomogeneous SBDs.
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Zhou et al. (2019) studied this question.