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High-power GaAs/AlGaAs double-heterostructure lasers have been fabricated on Si substrates using a single-step metalorganic chemical vapor deposition process. An output power of 130 mW (per facet) and a slope efficiency of 38% have been obtained under pulsed operation. The peak emission wavelength of the laser was 8823 Å and the beam full width at half power for the parallel and perpendicular far-field radiation patterns were 6° and 41°, respectively.
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Connolly et al. (1988) studied this question.
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